203 / 2019-06-30 23:28:57
Low Switch Loss and High Current Density Superjunction IGBT Based upon Deep Trench Technology
Superjunction, Super-IGBT, Deep Trench, Current density.
全文待审
Xukun Zhang / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Junjun Xing / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Jia Pan / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Yi Lu / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Longjie Li / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Hao Li / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Xuan Huang / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Chong Chen / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Jiye Yang / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
Weiran Kong / Shanghai HuahongGrace Semiconductor Manufacturing Corporation
In this paper we present a Superjunction IGBT (Super-IGBT) based upon Deep Trench (DT) Superjunciton technology to cope with high current density, smaller chip size and low switch losses. The current density of Super-IGBT is 550A/cm2(CP test:20A@1.8V), almost close to Si-IGBT limit. Moreover, under the same switch condition, Super-IGBT show 54% lower turn-on loss, 15% lower turn-off loss and 60% chip size shrink compared with the 650V FS-IGBT. Super-IGBT is favorable for high power and high frequency application.
重要日期
  • 会议日期

    10月09日

    2019

    10月10日

    2019

  • 07月20日 2019

    初稿截稿日期

  • 10月10日 2019

    注册截止日期

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