648 / 2019-01-31 19:40:57

Numerical analysis of the effect of crucible type on vacuum directional solidification purification process for multi-crystalline silicon

transient simulation · muti-crystalline silicon · directional solidification · silicon nitride · purifying effect

全体主题 > 数值模拟、建模与CFD

Silicon nitride crucibles for directional solidification are a promising alternative to silica crucibles due to the reusability of crucible for several casting and lower oxygen incorporate from crucible into the melt. In this paper the effect of silicon nitride (Si3N4) crucible compared with silica crucible on purification in vacuum directional solidification process in metallurgical route by a transient simulation. The temperature distribution, melt convection, m-c interface and solidification rate were analyzed for four different crucible types under the same operating conditions. We predicted the purifying effect of multi-crystalline silicon by vacuum directional solidification process. As a result of greater melt flow intensity, higher gas/melt interface temperature, slower solidification rate and slightly convex solid/melt interface shape, silicon vacuum directional solidification purification process using Si3N4 crucible without susceptor will have a better purifying effect. However vacuum directional solidification purification process with Si3N4 crucible has higher energy consumption.