Parallel Research of POWER MOSFETs based on SVPWM Algorithm
编号:168 访问权限:公开 更新:2020-10-29 20:01:14 浏览:371次 张贴报告

报告开始:2020年11月04日 15:35(Asia/Shanghai)

报告时间:5min

所在会场:[G] Poster session [G2] Poster Session 2 and Poster Session 7

摘要
In the field of motor control, parallelled MOSFET is often used as the power output module in order to pursue the miniaturization of motor controller. Although many characteristics of MOSFET are easy to be used in parallel, the problem of overcurrent caused by the inconsistency of switching process has not been solved fundamentally. In this paper, the current state of the power device applied to the SVPWM electronic control algorithm at the moment of commutation is analyzed in detail. The problem of power device switching inconsistencies is solved under the general topology, which makes the current transition smoothly in the body-diode and forward FET circulation. After these, the parallel characteristics of non-commutation time are optimized according to the interaction characteristics of zero-vector and non-zero vector. The significant effect of the scheme is proved by the comparison of experimental waveform results and temperature rise. This scheme provides strong support for the application of parallel MOSFET in motor control field.
关键词
Parallelled MOSFETs,Freewheel diode,SVPWM,Zero voltage vector,Temperature rise characteristic
报告人
Boyang Li
Shanghai Unversity

Kunpeng Fan
Shanghai Unversity

稿件作者
Boyang Li Shanghai Unversity
Jian Luo Shanghai University
Zhihui Jin Shanghai University
Kunpeng Fan Shanghai Unversity
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重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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