A New V-groove Trench SiC-MOSFET and an Improved Circuit Pattern for a Low-Los High-Power Single-Ended Wireless EV Charger
编号:252
访问权限:仅限参会人
更新:2021-12-03 10:53:10 浏览:643次
张贴报告
摘要
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
关键词
Single-Ended,SiC,Electric Vehicle,Wireless Power Transfer,Charger,V-groove trench
稿件作者
Shougo Hirooka
Osaka Institute of Technology
Hideki Omori
Osaka Institute of Technology
Kunihiro Sakamoto
National Institute of Advanced Industrial Science and Technology
Toshimitsu Morizane
Osaka Institute of Technology
Hidehito Matayoshi
Osaka Institute of Technology
发表评论