Crosstalk Analysis and Suppression of Silicon Carbide MOSFET based Three-level Neutral-Point-Clamped Inverter 2nd China International Youth Conference on Electrical Engineering CIYCEE 2021

报告详情

Crosstalk Analysis and Suppression of Silicon Carbide MOSFET based Three-level Neutral-Point-Clamped Inverter

编号：37 访问权限：仅限参会人更新：2021-12-04 15:33:11 浏览：655次张贴报告

报告开始：2021年12月17日 14:40（Asia/Shanghai）

报告时间：5min

所在会场：[Z] Poster Session [Z2] Poster Session 2: Power electronic technology and application

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摘要

This paper analyzes the gate-source characteristic of Silicon Carbide (SiC) MOSFET in Three-level Neutral-Point Clamped (3L-NPC) Inverter. To analyze the switching process of the SiC MOSFET, the bridge arm crosstalk and gate voltage oscillation phenomenon of the 3L-NPC, the mathematical model of the cross-talk voltage based on 3L-NPC is introduced. The switching period of the SiC devices is analyzed which include the crosstalk and parasitic oscillation. According to this, the snubber circuit and the gate voltage surge suppression circuit are designed, which also include overcurrent and overvoltage protection. The experiment shows good results of the proposed analyzes.

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报告人

Wubin Kong

Huazhong University of Science and Technology

稿件作者

Qiaopo Xiong 722th Research Institute of CSSC

Gen Long 722th Research Institute of CSSC

Junyao Tu 722th Research Institute of CSSC

Huida Gao Huazhong University of Science and Technology

Wubin Kong Huazhong University of Science and Technology

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重要日期

会议日期

07月11日

2023

至

08月18日

2023
11月10日 2021

初稿截稿日期
12月10日 2021

注册截止日期
12月11日 2021

报告提交截止日期

主办单位

IEEE IAS

承办单位

IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST