摘要详情

ID / 提交时间

63 / 2022-06-28 20:31:15

标题

A Novel IGBT with Double Buffer Layers for High Temperature Operation

关键字

Buffer Layer, deep-level impurities, high-temperature characteristics, IGBT, leakage current

主题及专题

Power Electronics Technology and Application > Power semiconductor devices, passive components, packaging, integration, and materials

状态

终稿

作者

Qian Zhang / Hunan University

Kai Xiao / China Southern Power Grid Extra High Voltage Power Transmission Company Maintenance Test Center

Jun Wang / Hunan University

Gaoqiang Deng / Hunan University

Shiwei Liang / Hunan University

摘要

In this paper, a novel IGBT with Double Buffer Layers (DB-IGBT) for high temperature operation is proposed and investigated. The deeper buffer layer of the DB-IGBT is doped with deep-level donor impurities to reduce the positive temperature dependence of bipolar transistor gain (α_PNP). The DB-IGBT thus achieves reduced leakage current with the almost same on-state voltage (V_on). Compared with the conventional trench IGBT, the leakage current and normalized leakage current of the DB-IGBT is decreased by more than 71% and 32% respectively at 200°C. While this approach is mainly aimed at reducing leakage current and its temperature dependence, the DB-IGBT also exhibits improved trade-off relationship between turn-off loss（E_off）and V_on. The short-circuit withstanding capability is also enhanced. The Double Buffer Layers offer a promising solution for high-voltage IGBTs aiming at junction temperature above 175°C.