The secondary electron emission (SEE) and multiplication on the surface of metal materials by electron impact will damage the performance of particle accelerator, spacecraft, vacuum electronic device, etc. It was widely concerned that new methods of SEE suppression to be explored by the related fileds. It was reported that the secondary electron yield (SEY) of Cu could be reduced from 1.34 to 0.92 by the micro-array stucture with micrometer scale, which was generated by surface etching techniques^[1]. In our previous study, it was found that the SEY of Ni could be reduced from 2.02 to 0.79 by vertical graphene, which was grew by plasma enhanced chemical vapor deposion(PECVD) technique^[2]. In order to achieve wonderful SEE suppression effect, it was attempted to combine these two methods by vertical graphene grew on the surface of substrate with micro-array stucture etched by laser. Comparative tests on samples subjected to etching alone, graphene growth alone, and etching followed by graphene growth revealed that the samples with etched surfaces followed by graphene growth exhibited the lowest SEY. This indicates that combining surface etching and coating techniques indeed results in superior secondary electron suppression effects.

secondary electron suppression, vertical graphene, surface etching