Comparative Analysis of Voltage Clamping Methods for SiC MOSFET-Based DC-SSCB
编号:61 访问权限:仅限参会人 更新:2024-08-15 10:47:28 浏览:120次 张贴报告

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摘要
Abstract -- Although conventional electromechanical circuit breakers have a proven record as effective and reliable devices for circuit protection, emerging power distribution technologies and architectures, such as dc microgrids, data centers, battery energy storage systems, and electric vehicle (EV) charging infrastructures require improved interruption performance characteristics (e.g., faster switching speed). The need for faster switching operation, in combination with the latest developments of advanced power semiconductor technologies, along with the increasing maturity for the material and process of the wide bandgap semiconductor Silicon Carbide (SiC). Has spurred an increase in the research and development in the area of solid-state circuit breakers. This article provides a comprehensive comparative analysis of voltage clamping methods for safe operation area (SOA) of SiC MOSFET-based various solid-state circuit breaker technologies. The simulation results and existing problems in different protection circuits are summarized in the end.
关键词
DC circuit breaker,SiC MOSFET,Solid State Circuit Breaker,Design Consideration
报告人
Imran Zulfiqar
Master Student Huazhong University of Science and Technology;School of Electrical and Electronic Engineering; Wuhan 430074; China.

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重要日期
  • 会议日期

    11月06日

    2024

    11月08日

    2024

  • 09月15日 2024

    初稿截稿日期

  • 11月08日 2024

    注册截止日期

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Huazhong University of Science and Technology
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