摘要详情

ID / 提交时间

1 / 2024-12-06 10:20:52

标题

Study on the Self-adjustable P+-emitter Efficiency Diode with the Controlled Injection of Backside Holes

关键字

fast recovery diode,SPEED,CIBH,Reverse recovery,Reverse voltage,Surge current

主题及专题

Review group 12

状态

摘要录用

作者

Hongchao Zhang / Huazhong University of Science and Technology

Lin Liang / Huazhong University of Science and Technology

Kaijun Wen / Huazhong University of Science and Technology

Ke Wang / Huazhong University of Science and Technology

摘要

To meet the requirements of high voltage, fast and soft reverse recovery and high dynamic reliability of fast recovery diodes (FRDs) in applications, this paper proposed a new structure of FRD. On the basis of traditional PiN diode and self-adjustable p⁺-emitter efficiency diode (SPEED), the proposed FRD adds a n-buffer at the cathode and realizes the controlled injection of backside holes (CIBH). The static and dynamic characteristics of proposed FRD are compared with PiN diode and SPEED, and the results show that the reverse recovery time of proposed FRD is reduced by 37.7% and 3.8%, and the reverse recovery current peak is reduced by 48.4% and 17.2%, respectively. The current density of proposed FRD is effectively controlled and evenly distributed during reverse recovery. And the negative effects of the new structure on the reverse voltage, forward voltage and surge current robustness are effectively controlled.