报告详情
Study on the Self-adjustable P+-emitter Efficiency Diode with the Controlled Injection of Backside Holes
编号：32
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更新：2025-05-06 14:44:26 浏览：6次
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摘要
To meet the requirements of high voltage, fast and soft reverse recovery and high dynamic reliability of fast recovery diodes (FRDs) in applications, this paper proposed a new structure of FRD. On the basis of traditional PiN diode and self-adjustable p+-emitter efficiency diode (SPEED), the proposed FRD adds a n-buffer at the cathode and realizes the controlled injection of backside holes (CIBH). The static and dynamic characteristics of proposed FRD are compared with PiN diode and SPEED, and the results show that the reverse recovery time of proposed FRD is reduced by 37.7% and 3.8%, and the reverse recovery current peak is reduced by 48.4% and 17.2%, respectively. The current density of proposed FRD is effectively controlled and evenly distributed during reverse recovery. And the negative effects of the new structure on the reverse voltage, forward voltage and surge current robustness are effectively controlled.
关键词
fast recovery diode,SPEED,CIBH,Reverse recovery,Reverse voltage,Surge current
报告人
Hongchao Zhang
doctoral student Huazhong University of Science and Technology稿件作者
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重要日期
-
会议日期
06月05日
2025
至06月08日
2025
-
04月30日 2025
初稿截稿日期
主办单位
IEEE PELS
IEEE
IEEE
承办单位
Southeast University
联系方式
- Quanwei Wu
- pr******@pub.seu.edu.cn
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