ZnO/CeO₂ and CeO₂/ZnO composite films were prepared by combining electrodeposition and hydrothermal methods. The surface morphology, composition, structure, semiconductor type and oxygen vacancy concentration of films were observed and analyzed. The surface adsorption energy, oxygen vacancy formation energy, heterojunction binding energy and diffusion barrier energy were calculated by density functional theory (DFT). The corrosion resistance and resistance switching properties of films were investigated by electrochemical tests. The results indicate that ZnO/CeO₂ and CeO₂/ZnO films have uniform surfaces, and the oxygen vacancy concentration in ZnO/CeO₂ film is higher than that in single ZnO or CeO₂ film, while the oxygen vacancy concentration in CeO₂/ZnO film is lower than that in single film. The corrosion resistance of ZnO/CeO₂ film is less than that of single film, while the corrosion resistance of CeO₂/ZnO film is higher than that of single ZnO or CeO₂ film. The interface binding energy and oxygen vacancy diffusion barrier energy of CeO₂/ZnO film are higher than those of ZnO/CeO₂ film. After the application of polarization voltage, the formation energy and diffusion barrier of oxygen vacancies in CeO₂/ZnO system are decreased, and the applying voltage could promote the generation and migration of oxygen vacancies. The cyclic switching between high and low resistance states could greatly extend the service life of films and expands the application of resistance switching behavior in the field of corrosion prevention.

Composite film,Corrosion resistance,Resistive switching,Oxygen vacancy