37 / 2025-02-28 16:07:31
High pressure structural and lattice dynamics study of bulk and few-layer α-In2Se3
high pressure,2D Materials
摘要录用
FengShiyu / Guangdong Technion-Israel Institute of Technology
StavrouElissaios / Guangdong Technion - Israel Institute of Technology
High pressure structural and lattice dynamics study of bulk and few-layer α-In2Se3 

Shiyu Feng,1, 2 Baihong Sun,1, 2 Wenting Lu,1, 2 Haikai Zou,1, 2 Chenxin Wei,1, 2 Qian Zhang,1 Bihan Wang,3 Martin Kunz,4 Hirokazu Kadobayashi,5 Azkar Saeed Ahmad,1, 6 Elad Koren,2 and Elissaios Stavrou1, 2, 6


1)Department of Materials Science and Engineering, Guangdong Technion-Israel Institute of Technology, Shantou 515063, China

2)Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel

3)Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, Hamburg 22607, Germany

4)Advanced Light Source,Lawrence Berkeley Laboratory,Berkeley, California 94720, USA

5)SPring-8/JASRI, 1-1-1 Kouto, Sayo-gun, Sayo-cho, Hyogo 679-5198, Japan

6)Guangdong Provincial Key Laboratory of Materials and Technologies for Energy Conversion, Guangdong Technion-Israel Institute of Technology, Shantou 515063, China

shiyu.feng@gtiit.edu.cn, elissaios.stavrou@gtiit.edu.cn


 

In the context of searching for ultrathin and robust ferroelectric two-dimensional (2D) materials, α-In2Se3 has drawn considerable attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity [1]. This makes α-In2Se3 a potential candidate for emerging artificial intelligence, information processing, and memory applications. It is expected that pressure will significantly affect the physicochemical properties of α-In2Se3 and recent research results on other layered compounds, such as graphene and Transition Metal Dichalcogenide, further support this hypothesis. However, to our knowledge, the overall structural behavior and the optical properties of the α-In2Se3 phase under high pressure (HP) have not been systematically investigated.

In this study, the overall structural evolution of both bulk and few-layer α-In2Se3 under pressure was explored by performing a concomitant in-situ synchrotron angle dispersive powder x-ray diffraction (XRD) and Raman spectroscopy study in a diamond anvil cell (DAC) up to 60 GPa (at room temperature) for both techniques. Helium and Neon were used as pressure-transmitting media (PTM), for the bulk and few-layer α-In2Se3, respectively. Helium remains fairly hydrostatic up to the highest pressure in this study, while Neon is slightly non-hydrostatic when pressure above 40 GPa [2]. The pressure inside the sample chamber was determined by ruby luminescence method [3] and/ or the gold Equation of state (EOS) [4].

In the case of bulk α-In2Se3, the results from both experimental methods reveal a pressure-induced structural phase transition from α-In2Se3 to a monoclinic β′-In2Se3 structure at ≈ 1 GPa, in agreement with previous studies [5-7]. Based on our detailed measurements using both experimental techniques and F−f formalism, the β′-In2Se3 structure remains stable up to 45 GPa, without a clear indication of a phase transition towards the previously reported β-In2Se3 phase [6-7]. With further pressure increase, another phase transition towards phase IV was observed, which can be indexed with an orthorhombic solid solution structure. Its low volume is not only more stable in terms of enthalpy but also points towards a crystal structure with three atoms per primitive unit cell. Based on the Raman results, the expected stoichiometry is still In2Se3. Therefore, the only plausible explanation is the formation of a solid solution, with 0.4 occupancy by In and 0.6 occupancy by Se at the relevant crystallographic positions.

A few-layer α-In2Se3 has also been investigated under pressure. However, to our knowledge, in contrast to the case of other 2D materials (such as graphite) there is no previous reported methodology in determining the number of layers based on Raman measurements. Therefore, a novel straightforward approach was developed to estimate the thickness of the specimens using Raman spectroscopy. Moreover, a backside micromachining procedure for loading the few-layer α-In2Se3 together with a custom made SiO2/Si substrate inside a typical diamond anvil cell was developed. Finally, high-pressure Raman measurements were performed. Bulk and few-layer α-In2Se3, appear to follow identical structural evolution under pressure. However, the last observed phase transition ( b’ phase to IV phase) at 45 GPa appears to be abrupt in the case of few-layer α-In2Se3, while it involves a coexistence of the two phases, for a significant pressure range, for bulk α-In2Se3. This is attributed to the difference in the morphology between specimens, i.e. single-crystal and powder in the case of few-layer and bulk α-In2Se3, respectively.



Reference:

[1]    W. Ding, J. Zhu, Z. Wang, Y. Gao, D. Xiao, Y. Gu, Z. Zhang, and W. Zhu. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 Van Der Waals materials. Nature communications, 8(1):14956, 2017.

[2]    S. Klotz, J.-C. Chervin, P. Munsch, and G. Le Marchand. Hydrostatic limits of 11 pressure transmitting media. Journal of Physics D: Applied Physics, 42(7):075413, Mar. 2009.

[3]    G. Piermarini. High pressure x-ray crystallography with the diamond cell at nist/nbs. Journal of Research of the National Institute of Standards and Technology, 106(6):889, Nov. 2001.

[4]    O. L. Anderson, D. G. Isaak, and S. Yamamoto. Anharmonicity and the equation of state for gold. Journal of Applied Physics, 65(4):1534–1543, Feb. 1989.

[5]    A. M. Rasmussen, S. T. Teklemichael, E. Mafi, Y. Gu, and M. D. McCluskey. Pressure-induced phase transformation of In2Se3. Applied Physics Letters, 102(6), Feb. 2013.

[6]    R. Vilaplana, S. G. Parra, A. Jorge-Montero, P. Rodríguez-Hernández, A. Munoz, D. Errandonea, A. Segura, and F. J. Manjón. Experimental and theoretical studies on α-In2Se3 at high pressure. Inorganic chemistry, 57(14):8241–8252, 2018.

[7]    J. Zhao and L. Yang. Structure evolutions and metallic transitions in In2Se3 under high pressure. The Journal of Physical Chemistry C, 118(10):5445–5452, 2014.
重要日期
  • 会议日期

    05月12日

    2025

    05月15日

    2025

  • 03月26日 2025

    初稿截稿日期

  • 04月30日 2025

    提前注册日期

  • 05月15日 2025

    注册截止日期

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