70 / 2017-02-20 15:49:51

A novel SPiN diode with double-layer structure

SPiN diode; double-layer structure; heterojunction; high carrier concentration

Silicon-based solid state plasma antenna based on surface PiN diodes is characterized by its wide radiation range, good stealth characteristic, compatible with microelectronic technology and dynamic reconfiguration, which will have very broad application prospects in the fields of wireless communication, radar and remote sensing. To improve carrier concentration within the ‘i’ region, a novel SPiN diode with double-layer structure is presented in this paper. This structure can compensate the concentration attenuation at the midpoint of the ‘i’ region, which makes the carriers have a more uniform distribution with high concentration, and carrier concentration within the ‘i’ region improved more than three times compared with the traditional SPiN diode. The usefulness of the Si/Ge/Si heterojunction diode with double-layer structure is also examined in this paper. The band gap discontinuity introduced in heterojunction can obtain high injection ratio, increase further carrier concentration and decrease forward current. These results indicate that a fully reconfigurable semiconductor plasma antenna based on this novel surface PiN diode with high carrier concentration will be achieved to meet the currently-growing communication requirement. It can also be used in high power electronic devices and other semiconductor fields.