72 / 2017-02-23 10:13:26
Research of Ku-band Reconfigurable Plasma Antenna Based on Surface PiN Diodes
solid state plasma, SPiN diode, frequency reconfigurable antenna
摘要录用
Han Su / School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials, Xidian University
Huiyong Hu / School of Microelectronics, Xidian University
Bin Wang / School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials, Xidian University
Haiyan Kang / School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials, Xidian University
Yu Wang / School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials, Xidian University
Silicon-based solid state plasma antenna is characterized by wide radiation range, good stealth characteristic and dynamic reconfiguration, which will have a broad application prospects in the future. In this paper, the concept of Ku-band reconfigurable plasma antenna is presented. It used forward SPiN diode as the radiation element and the metal-like conductive plasma area is activated in the intrinsic region by the injection of dc current. Therefore, frequency reconfigurable antenna will be achieved through define the number of forward SPiN diodes dynamically. Based on optimize parameters of antenna, the reconfigurable frequencies of 13.71 GHz, 15.17 GHz, and 17.81 GHz will be obtained, and the corresponding radiation efficiency is 79.70%, 80.7%, and 81.7% respectively. The study is conducted to reveal that a frequency reconfigurable antenna can be easily formed in a single system which makes it more advantageous than the traditional antenna.
重要日期
  • 会议日期

    04月06日

    2017

    04月08日

    2017

  • 03月26日 2017

    初稿截稿日期

  • 03月29日 2017

    初稿录用通知日期

  • 04月01日 2017

    终稿截稿日期

  • 04月08日 2017

    注册截止日期

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Bharath Institute of Higher Education and Research
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