484 / 2017-05-09 21:44:48
The Comparison of DC Semiconductor Circuit Breaker and SF6 Circuit Breaker with Transverse Magnetic Field for DC Transmission
13546,13549,13785,13921
终稿
Lei Gao / Xi'an Jiaotong University
Bin Xiang / Xi‘an Jiaotong University
Kun Yang / Xi'an Jiaotong University
Zhiyuan Liu / Xi’an Jiaotong University
Yingsan Geng / State Key Laboratory of Electric Power Equipment, Xi’an Jiaotong University
Jianhua Wang / Xi'an Jiaotong University
Satoru Yanabu / Xi‘an Jiaotong University
DC transmission has a lot of merits compared with AC transmission. For
example, the cost of the construction and the equipment is less than that of the AC transmission system. Besides, more energy can be transmitted in DC transmission lines. Recently, multi-terminal transmission lines are required urgently. For that purpose, the reliable DC transmission circuit breakers must be developed. As we all know, there is no natural current zero in DC power supply systems. When a fault current begins, a large current will flow through the system. Thus a skillful DC interruption process is needed to cut the fault. The existence of the reliable DC circuit breakers ensures the successful interruption process and can protect the DC transmission systems. In this paper a superconducting fault current limiter (SFCL) has been introduced which can limit the current to a small current level immediately after the fault occurs. And then, the limited current needs to be interrupted by DC circuit breakers. In the paper, two different kinds of DC circuit breakers were investigated and compared. One is a SF6 gas breaker and other gas breaker which have a transverse magnetic field (TMF) inside the chamber. The other is a SiC semiconductor breaker. A SF6 gas breaker with TMF can decrease arcing time, however, the arcing time is still very long. While a semiconductor circuit breaker has a lot of series and parallel connections which will increase the cost. The aim of our research is to find out either gas breakers with TMF or semiconductor breakers are better. Various tasks need to be done in the future such as the dv/dt and di/dt characteristics of SiC semiconductors, the arcing parameters of gas circuit breakers and so on.
重要日期
  • 会议日期

    10月22日

    2017

    10月25日

    2017

  • 01月04日 2017

    摘要录用通知日期

  • 03月10日 2017

    初稿录用通知日期

  • 06月30日 2017

    终稿截稿日期

  • 10月25日 2017

    注册截止日期

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