A Multi Time-Scale Electro-thermal Co-Simulation Approach of SiC-MOSFET Considering Distribution of Electro-thermal Stress on Chip
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Xin Naval University of Engineering
Room1
仅限参会人 口头报告
Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Lu Hao School of Microelectronics, Xidian University
Room2 /S5&S6
2021年08月27日 08:45~09:00
仅限参会人 口头报告
Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Meng Wuji Nanjing University of Aeronautics and Astronautics
Room2 /S7&S8
2021年08月27日 14:00~14:15
仅限参会人 口头报告
Analysis of GaN HEMT Degradation under RF Overdrive Stress
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chen YiQiang The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology；Xie YuHan ,South China University of Technology
Room1 /S1&S2
2021年08月27日 09:45~10:00
仅限参会人 口头报告
Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Shen Zhanwei Chinese Academy of Sciences,Institute of Semiconductors
Room2
公开 张贴报告
Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhao Hongbo Aalborg University
Room1
仅限参会人 口头报告
Characteristics of SiC MOSFET in a Wide Temperature Range
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhu Mengyu Xi'an Jiaotong University
Room1 /S1&S2
2021年08月27日 10:45~11:00
仅限参会人 口头报告
Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhang Yifan Huazhong University of Science and Technology
Room1 /S3&S4
2021年08月27日 15:30~15:45
仅限参会人 口头报告
Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Shimbori Atsushi University of Texas at Austin
Room2
仅限参会人 口头报告
A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhaoliang Wen Harbin Institute of Technology
Room2 /S7&S8
2021年08月27日 14:30~14:45
仅限参会人 口头报告
