Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Huang Wei University of Electronic Science and Technology of China
Room2 /S5&S6
2021年08月27日 09:00~09:15
仅限参会人 口头报告
Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wei Zhaoxiang Southeast University, Nanjing, China
Room2 /S7&S8
2021年08月27日 16:30~16:45
仅限参会人 口头报告
A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhou Yu Zhejiang University
Room1 /S3&S4
2021年08月27日 15:45~16:00
仅限参会人 口头报告
Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qin Haihong Nanjing University of Aeronautics and Astronautics
Room2 /S5&S6
2021年08月27日 10:00~10:15
仅限参会人 口头报告
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Liu Chao Technical University of Denmark
Room2 /S7&S8
2021年08月27日 15:15~15:30
仅限参会人 口头报告
Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Cheng Qing China,School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin
Room1 /S3&S4
2021年08月27日 14:15~14:30
仅限参会人 口头报告
A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Hossain Md Maksudul UNIVERSITY OF ARKANSAS
Room1 /S1&S2
2021年08月27日 09:15~09:30
仅限参会人 口头报告
Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Dhanasekaran Saravanan Indian Institute of Technology Madras
Room1 /S3&S4
2021年08月27日 15:00~15:15
仅限参会人 口头报告
Intelligent DC- and AC Power-Cycling Platform for Power Electronic Components
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhang Kaichen Aalborg Univeristy
Room1
仅限参会人 口头报告
Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Xuan University of Electronic Science and Technology of China
Room1 /S1&S2
2021年08月27日 10:30~10:45
仅限参会人 口头报告
