Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qin Haihong Nanjing University of Aeronautics and Astronautics
Room2 /S5&S6
2021年08月27日 10:15~10:30
仅限参会人 口头报告
A Novel Low Parasitic Inductance SiC Power Module Based on Symmetrical Planar Packaging Structure and Integrating the Laminated Busbar
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Liu Yuanjian HeFei University of Technology
Room1
仅限参会人 口头报告
15kV Press Pack SiC IGBT
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
du yujie ,Global Energy Interconnection Research Institute Co.,ltd
Room1 /S3&S4
2021年08月27日 16:15~16:30
仅限参会人 口头报告
A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chen Jing Huazhong University of Science and Technology,the State Key Laboratory of Advanced Electromagnetic Engineering and Technology
Room2 /S7&S8
2021年08月27日 16:00~16:15
仅限参会人 口头报告
Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wei Yuqi UNIVERSITY OF ARKANSAS
Room1 /S1&S2
2021年08月27日 09:00~09:15
仅限参会人 口头报告
Power Loop Inductance Extraction with High Order Polynomial Fitting Algorithm for SiC MOSFET Power Module Characterization
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wang Zhikun Fudan University
Room1 /S3&S4
2021年08月27日 16:45~17:00
仅限参会人 口头报告
A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit Configuration
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Ding Yujie Fudan University
Room2 /S5&S6
2021年08月27日 10:45~11:00
仅限参会人 口头报告
A Control-type ZVS Technique for GaN-Based Three-port AC/DC Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wu Hongfei Nanjing University of Aeronautics and Astronautics
Room2
仅限参会人 口头报告
Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wei Zhaoxiang Southeast University, Nanjing, China
Room2 /S7&S8
2021年08月27日 16:30~16:45
仅限参会人 口头报告
Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Huang Wei University of Electronic Science and Technology of China
Room2 /S5&S6
2021年08月27日 09:00~09:15
仅限参会人 口头报告
