A Model Parameter Optimization Method of SiC Power MOSFET终稿

Yang Wen, Yang Yuan*, Wang Yan

全体主题 > Device characterization and modeling

First-principles investigations of point defects at 4H-SiC/SiO2 interface终稿

Chenguang Liu, Yuehu Wang*, Yutian Wang, Zhiqiang Cheng

全体主题 > Device characterization and modeling

Substrate Termination Technique for Monolithically Integrated Lateral GaN-on-Si Power Devices摘要待审

Hanyuan Zhang*

全体主题 > Device characterization and modeling

Quantitative Analysis and Suppression Strategies of Dvdt Induced Turn-on of Cascode GaN FETs in Half-bridge Circuits终稿

Tianhua ZHU*, Fang ZHUO, Feng WANG, Hailin WANG, Xiaoping SUN, shuhuai SHI, Baohui MA

全体主题 > Device characterization and modeling

Failure Models of SiC MOSFET and SiC JFET终稿

Yuming Zhou*

全体主题 > Device characterization and modeling

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss终稿

Shen Zhanwei, Zhang Feng*

全体主题 > Device characterization and modeling

A Study of the Performances Degradation for 4H-SiC Traps-stressed UMOSFET using Experimental and Simulation Methods终稿

shen zhanwei*

全体主题 > Device characterization and modeling

IGCT Circuit Model Based on Pspice Modeling Platform终稿

yang song , cailin wang*

全体主题 > Device characterization and modeling

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies终稿

Meng Zhang*

全体主题 > Device characterization and modeling

Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistors终稿

Lixiang Chen*

全体主题 > Device characterization and modeling

Instability of 4H-SiC Power Device under Repetitive Avalanche Current Stress终稿

全体主题 > Device characterization and modeling

Characterization of SiC MOSFET Switching Performance终稿

全体主题 > Device characterization and modeling

Ultralow Angle Bevel-Etched Junction Termination Extension for High Voltage SiC Power Devices终稿

Kun Zhou*, Hui Li, Qiang Li, Liang Xu, Lin Zhang, Lei Gao, Xin Cui, Long Zhang, Kun Yang, Yang Zhou, Tao Li, Gang Dai

全体主题 > Device characterization and modeling

Current Sharing Analysis of Paralleled GaN HEMT Via Feedback Theory终稿

Mao Zhang*, Weiping Zhang

全体主题 > Device characterization and modeling

Influence of Parasitic Capacitance on Transient Current Distribution in Paralleled SiC MOSFETs终稿

Junji Ke*, Huazhen Huang, Peng Sun, James Abuogo, Zhibin Zhao, Xiang Cui

全体主题 > Device characterization and modeling