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280
Comparative Study of Power Semiconductor Reliability in Hybrid DC Circuit Breaker: SiC MOSFET versus Si IGBT终稿

Jingcun LIU, Guogang ZHANG*, Lu QI, Qian CHEN, Yingsan GENG, Jianhua WANG

全体主题 > Harsh environment (e.g. high temperature) operation and reliability

279
Quantitative Analysis and Suppression Strategies of Dvdt Induced Turn-on of Cascode GaN FETs in Half-bridge Circuits终稿

Tianhua ZHU*, Fang ZHUO, Feng WANG, Hailin WANG, Xiaoping SUN, shuhuai SHI, Baohui MA

全体主题 > Device characterization and modeling

278
High Breakdown Field AlGaN/GaN HEMT with AlN Super Back Barrier终稿

Yanmin Guo, Yulong Fang*, Jiayun Yin, Bo Wang, Zhirong Zhang, Jia Li, Weili Lu, Nan Gao, Zhihong Feng

全体主题 > Device structures and fabrication techniques

277
An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices终稿

Lin Fan*, Arnold Knott, Ivan Jørgensen, Christian Lumby

全体主题 > Very high efficiency and compact converters

276
Failure Models of SiC MOSFET and SiC JFET终稿

Yuming Zhou*

全体主题 > Device characterization and modeling

275
Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss终稿

Shen Zhanwei, Zhang Feng*

全体主题 > Device characterization and modeling

274
273
SiC Trench IGBT with a UV-Shaped Gate终稿

Zhengxin Wen, Feng Zhang*, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Guosheng Sun, Yiping Zeng

全体主题 > Device structures and fabrication techniques

272
Gate drive Design for a Hybrid Si IGBT/SiC MOSFET Module终稿

Puqi Ning*, Lei Li

全体主题 > Packaging, power modules, and ICs

271
Demonstration of GaN pn junction by implanting fluorine ions into free-standing bulk substrate n-GaN终稿

全体主题 > Device structures and fabrication techniques

270
A Well-Designed High Power Density Single-Phase Inverter Power Module Using E-Mode GaN HEMTs终稿

全体主题 > Very high efficiency and compact converters

269
Study on the New Structure of SiGe HBT with Field Plate终稿

全体主题 > Device structures and fabrication techniques

268
IGCT Circuit Model Based on Pspice Modeling Platform终稿

yang song , cailin wang*

全体主题 > Device characterization and modeling

267
Ultra-Fast Short Circuit Protection Solutions for E-mode GaN HEMT终稿

He Li*, Xintong Lyu, Jin Wang

全体主题 > Gate drive and other auxiliary circuits

266
Common Mode Votage Compensation for 7kV SiC-based Modular Multilevel Converter to Reduce Capacitor Voltage Ripple终稿

Ziwei Ke*, Jianyu Pan

全体主题 > Applications in renewable energy and storage, transportation, industrial drives, and grid power

重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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