活动简介

The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is the premier international forum for bipolar/BiCMOS research for technical communication focused on the needs and interests of the bipolar and BiCMOS community. Papers covering the design, performance, fabrication, testing and application of bipolar and BiCMOS integrated circuits, bipolar phenomena, and discrete bipolar devices are solicited.

征稿信息

重要日期

2016-04-15
摘要截稿日期
2016-06-17
初稿录用日期
2016-07-15
终稿截稿日期

征稿范围

  • ANALOG/MIXED SIGNAL: Analog ICs, Mixed analog/digital ICs – Digital ICs – DACs and ADCs – Operational amplifiers – Voltage references and regulators – Integrated filters – Sensors and actuators – Networking ICs, MUX/DEMUX, Clock and data recovery, Decision circuits, Equalizers – Optical data links, Laser and modulator drivers – Gate arrays – Cell libraries – High-voltage ICs – Biomedical electronics – Power Management ICs – Energy harvesting ICs – Motor controls – Analog subsystems within a VLSI chip – Packaging of high-performance ICs.

  • DEVICE PHYSICS: New device physics phenomena in Si, SiGe, SiC, GaN MOS, and III-V devices – Device design issues and scaling limits – Hot electron effects and reliability physics – Transport and high field phenomena – Noise – Linearity/Distortion – Novel measurement techniques – Operation in extreme environments (low and high temperatures, radiation effects).

  • MODELING/SIMULATION: Improved BJT and HBT models – Behavioral modelling techniques – Parameter extraction methods and test structures – De-embedding techniques – RF and thermal simulation techniques – Modelling of passives, interconnect and packages – Statistical modelling – Device, process and circuit simulation – CAD/modelling of power devices – packaging of power devices and ESD phenomena.

  • PROCESS TECHNOLOGY: Advances in all aspects of BiCMOS processes and device structures – Process technology and advanced processing techniques related to SiGe heterojunction bipolar devices, Si bipolar devices, and III-V heterojunction devices – Manufacturing solutions and yield improvements for bipolar/BiCMOS – Fabrication and integration of high-performance passive components, including MEMs – Process technology for discrete and integrated bipolar/BiCMOS power devices, IGBT, RF power devices, and DMOS – Wide bandgap bipolar devices (SiC, GaN, GaAs) and related process technology – Reliability aspects of SiGe, Si, and III-V devices, especially relating to process improvements and advanced processing  techniques.

  • WIRELESS CIRCUITS: RF and millimeter-wave circuits and systems – THz circuits – Radio and transceiver subsystems – Low Noise Amplifiers – Automatic gain control – Mixers – Voltage controlled oscillators – Frequency synthesizers – Power amplifiers – High-speed data converters – RF switches – Suppression of noise and distortion – RF Packaging – Integrated RF passives.

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重要日期
  • 会议日期

    09月25日

    2016

    09月27日

    2016

  • 04月15日 2016

    摘要截稿日期

  • 06月17日 2016

    初稿录用通知日期

  • 07月15日 2016

    终稿截稿日期

  • 09月27日 2016

    注册截止日期

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