The scaling of silicon MOSFETs, DRAM, and Flash memory has already required the use for finFETS, high-k dielectrics and SiGe stressors and there is active research in tunnelFETs. Further progress requires new materials and new device design engineering. For future MOSFET logic devices and power MOSFETs, novel channel materials such as broken-gap semiconductor heterostructures, transition metal dichalcogenides (TMD), and related materials are being investigated along with novel gates such as ferroelectrics and spin-based materials. Future non-volatile memory includes phase change memory with multistate gates, ferroelectrics, and 3D structures. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.