第32届北美分子束外延会议 32nd North American Conference on Molecular Beam Epitaxy NAMBE 2016

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活动简介

The 32nd North American Conference on Molecular Beam Epitaxy (NAMBE 2016) is a prominent international forum for reporting scientific and technological developments in Molecular Beam Epitaxy research.

The conference showcases important results from fundamental materials and device research, through technological applications, and into high-volume and low-cost production. NAMBE features the presentations of the MBE Innovator Award, the NAMBE Young Investigator Award, and the Best Student Paper awards.

In addition to a diverse technical program, vendors will exhibit the latest equipment available for material growth and characterization. The exhibit will surround the coffee breaks and poster presentations, providing many opportunities for discussions between attendees and vendors.

征稿信息

征稿范围

ST1: Fundamentals of MBE growth
ST2: MBE growth modifications
ST3: Materials characterization
ST4: MBE technology (e.g. in situ monitoring)
ST5: MBE as a production technology
ST6: Science and Technology of MBE Poster Session
Novel Materials (NM):

NM1: III-Arsenides, Antimonides, Phosphides
NM2: III-Nitrides and dilute-nitrides
NM3: II-VI materials and other chalcogenides (e.g. Bi2Se3)
NM4: Group IV Materials: SiGeSnC alloys, and SiC
NM5: Graphene, transition metal dichalcogenides, and other 2D materials
NM6: Oxides
NM7: ZnO
NM8: Heteroepitaxy
NM9: Hybrid materials and nanocomposites
NM10: Nanowires, quantum dots, and other low dimensional nanostructures
NM11: Other materials
NM12: Novel Materials Poster Session
MBE-Grown Devices (GD):

GD1: Photonic devices
GD2: Electronic devices
GD3: Solar cells
GD4: Thermoelectrics
GD5: Spintronics
GD6: Device physics
GD7: MBE-Grown Devices Poster Session