A Novel ACDC Single-Phase Bridgeless SEPIC PFC Converter With Reduced Conduction Losses and Simple Structure
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Lin Xiang Shanghai University
P /P5
2021年08月27日 12:55~13:00
公开 张贴报告
Degradation mechanism of AlGaN/GaN HEMT based on high temperature reverse bias stress
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Lu Meng Xiangtan University
P /P4
2021年08月27日 12:40~12:45
公开 张贴报告
Ultra-thin Coupled Inductor for a GaN-Based CRM Buck Converter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Hua Ming Nanjing Research Institute of Electronics Technology
P /P2
2021年08月27日 12:40~12:45
公开 张贴报告
A Dynamic Current Sharing Method in Multi-chip SiC Power Module Using Stacked DBC Bridges and Decoupling Capacitors Based on the Original Simple Module Layout
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Lv Jianwei Huazhong University of Science and Technology
P /P4
2021年08月27日 12:45~12:50
公开 张贴报告
Mode Switchover Strategy for Multi-port Energy Router Based on State Flow Diagram
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wei Zhiguo ,China University of Geosciences (Wuhan)
P /P5
2021年08月27日 13:20~13:25
公开 张贴报告
Automated SiC MOSFET Power Module Switching Characterization Test Platform
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yang Shuhao Fudan University
P /P3
2021年08月27日 12:45~12:50
公开 张贴报告
LLC Resonant Converter Based on Trench Gate SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chu Jinkun Anhui University of Technology
P /P5
2021年08月27日 13:10~13:15
公开 张贴报告
Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Wenyu Fudan University, China, Shanghai, 200433
P /P3
2021年08月27日 12:30~12:35
公开 张贴报告
Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Tao Mengling University of Electronic Science and Technology of China
P /P3
2021年08月27日 12:05~12:10
公开 张贴报告
Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Sun Yu Institute of Microelectronics, Peking University；Han Chun Peking University
P /P3
2021年08月27日 12:00~12:05
公开 张贴报告
